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Aluminum Gallium Arsenide
Chemical Properties
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Aluminium Gallium Arsenide
(semiconductor material) |
| Properties |
| Molecular formula |
AlxGa1-xAs |
| Density |
5.32-1.56 g/·cm3 |
| Crystal structure |
Zinc Blende |
| Lattice constant |
5.6533+0.0078x A |
| Direct band gap |
1.42 - 2.16 eV |
| Dielectric constant |
12.90-2.84x (static)
10.89-2.73x (high frequency)
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Except where noted otherwise, data are given for
materials in their standard state
(at 25 °C, 100 kPa)
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More Information: N/A
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Source: Wikipedia article Aluminum Gallium Arsenide
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